The n-type MOSFETs are arranged in a so-called "pull-down network" (PDN) between the logic gate output and negative supply voltage, while a resistor is placed between the logic gate output and the positive supply voltage. The circuit is designed such that if the desired output is low, then the PDN will be active, creating a current path between the negative supply and the output.
A | B | A NOR B |
---|---|---|
0 | 0 | 1 |
0 | 1 | 0 |
1 | 0 | 0 |
1 | 1 | 0 |
While NMOS logic is easy to design and manufacture (a MOSFET can be made to operate as a resistor, so the whole circuit can be made with NMOSFETs), it has several shortcomings as well. The worst problem is that a DC current flows through an NMOS logic gate when the PDN is active, that is whenever the output is low. This leads to static power dissipation even when the circuit sits idle.
Also, NMOS circuits are slow to transition from low to high. When transitioning from high to low, the transistors provide low resistance, and the capacitative charge at the output drains away very quickly. But the resistance between the output and the positive supply rail is much greater, so the low to high transition takes longer. Using a resistor of lower value will speed up the process but also increases static power dissipation.
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